hopbion.blogg.se - High power transistor

The technological advances of this work lay on both the newly developed high-quality ML-MoS 2 wafers and the ultra-thin high-κ dielectric/metal-gate technology. In this work, we demonstrate the realization of low-power flexible ICs based on ML-MoS 2. However, limited by materials and fabrications, such large-area flexible ICs suffer from either low performances or high-power consumptions, and it is challenging to realize both in a synergic manner. Up to now, large-scale flexible ML-MoS 2 ICs with various fully functional units such as logic gates, inverters, and ring oscillators (ROs) have been demonstrated vividly 23, 24, 25.

Hence, one might ask if such TFT technologies developed on rigid substrates could be transferred onto flexible substrates and be superior to existing flexible TFT technologies.

s −1, high on/off ratio of >10 8, low subthreshold swing (SS) approaching the thermionic limit of 60 mV.

It has been shown that, at room temperature, rigid ML-MoS 2 TFTs can feature high electron mobility ( μ) of >100 cm 2 Third, it has high electrical quality and is available at wafer scale 22, 33, 34, 35, 36. Second, its 2H phase has a moderate band gap of ~2 eV, between that of silicon (~1.1 eV) and indium gallium zinc oxide (~3.5 eV), hence can work with both low off-state and high on-state currents 31, 32. Such a thin channel also offers benefits in ultra-scale devices where short channel effects would be the main concern 28, 29, 30.

First, ML-MoS 2 is atomically thin (only ~0.7 nm) and smooth yet mechanically strong (in-plane) and flexible (out-of-plane) 1, 27. In principle, such TFTs have great potential in both high performance and low-power applications, if considering the following merits. Recently, the 2D semiconductor of monolayer MoS 2 (ML-MoS 2) emerged as an advanced channel material in large-area flexible TFTs 18, 19, 20, 21, 22, 23, 24, 25, 26. Conventional flexible ICs are usually fabricated from organic semiconductors 6, 8, silicon of either amorphous or polycrystalline forms 9, 10, oxide semiconductors 11, 12, and carbon nanotubes (CNTs) 13, 14, 15, 16, 17 via the thin-film-transistor (TFT) technology. Among them, flexible integrated circuits (ICs) dealing with information processing are favorable in portable, wearable, and implantable electronics with technological demands towards flexibility and robustness of large-area devices 6, 7, 8. Our process could represent a key step towards using energy-efficient flexible ML-MoS 2 ICs in portable, wearable, and implantable electronics.įlexible electronics plays an integral role in a large spectrum of fields including information technology, energy generation and storage, bio-sensing, and diagnosis 1, 2, 3, 4, 5. Moreover, we realize fully functional large-scale flexible ICs operating at voltages below 1 V. The rigid devices can be operated in the deep-subthreshold regime with low power consumption and show negligible hysteresis, sharp subthreshold slope, high current density, and ultra-low leakage currents. In this work, we develop an ultra-thin high-κ dielectric/metal gate fabrication technique for the realization of thin film transistors based on high-quality wafer scale ML-MoS 2 on both rigid and flexible substrates. However, these are currently challenging to satisfy due to limitations in the material quality and device fabrication technology. The most important demands for the application of such ML-MoS 2 ICs are low power consumption and high performance. Monolayer molybdenum disulfide (ML-MoS 2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs).